X28C513 E2PROM Datasheet

X28C513 Datasheet, PDF, Equivalent


Part Number

X28C513

Description

64K x 8-Bit Alterable E2PROM

Manufacture

Xicor

Total Page 25 Pages
Datasheet
Download X28C513 Datasheet


X28C513
X28C512/X28C513
512K
X28C512/X28C513
5 Volt, Byte Alterable E2PROM
64K x 8 Bit
FEATURES
Access Time: 90ns
Simple Byte and Page Write
—Single 5V Supply
— No External High Voltages or VPP Control
Circuits
—Self-Timed
—No Erase Before Write
—No Complex Programming Algorithms
—No Overerase Problem
Low Power CMOS:
—Active: 50mA
—Standby: 500µA
Software Data Protection
—Protects Data Against System Level
Inadvertant Writes
High Speed Page Write Capability
Highly Reliable Direct Write™ Cell
—Endurance: 100,000 Write Cycles
—Data Retention: 100 Years
Early End of Write Detection
DATA Polling
—Toggle Bit Polling
Two PLCC and LCC Pinouts
—X28C512
—X28C010 E2PROM Pin Compatible
—X28C513
—Compatible with Lower Density E2PROMs
DESCRIPTION
The X28C512/513 is an 64K x 8 E2PROM, fabricated
with Xicor’s proprietary, high performance, floating gate
CMOS technology. Like all Xicor programmable non-
volatile memories the X28C512/513 is a 5V only device.
The X28C512/513 features the JEDEC approved pinout
for bytewide memories, compatible with industry stan-
dard EPROMS.
The X28C512/513 supports a 128-byte page write op-
eration, effectively providing a 39µs/byte write cycle and
enabling the entire memory to be written in less than 2.5
seconds. The X28C512/513 also features DATA Polling
and Toggle Bit Polling, system software support schemes
used to indicate the early completion of a write cycle. In
addition, the X28C512/513 supports the Software Data
Protection option.
PIN CONFIGURATIONS
PLASTIC DIP
CERDIP
FLAT PACK
SOIC (R)
NC
NC
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1 32
2 31
3 30
4 29
5 28
6 27
7 26
8 25
X28C512
9 24
10 23
11 22
12 21
13 20
14 19
15 18
16 17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/04
I/O3
3856 FHD F01
A11
A9
A8
A13
A14
NC
NC
NC
WE
VCC
NC
NC
NC
NC
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
TSOP
X28C512
40 OE
39 A10
38 CE
37 I/O7
36 I/O6
35 I/O5
34 I/O4
33 I/O3
32 NC
31 NC
30 VSS
29 NC
28 NC
27 I/O2
26 I/O1
25 I/O0
24 A0
23 A1
22 A2
21 A3
PGA
I/O0 I/O2 I/O3 I/O5 I/O6
15 17 19 21 22
A1 A0 I/O1 VSS I/O4 I/O7 CE
13 14 16 18 20 23 24
A2 A3
12 11
A10 OE
25 26
A4
10
A6
8
A5
9
A7
7
BOTTOM
VIEW
A11 A9
27 28
A8 A13
29 30
A12 A15 NC VCC NC NC A14
6 5 2 36 34 32 31
NC NC NC WE NC
4 3 1 35 33
3856 ILL F22
3856 FHD F02
PLCC / LCC
30
A7
A6
5 4 3 2 32 31 29
6 1 28
A14
A13
A5 7
27 A8
A4
A3
8 26
9
X28C512
(TOP VIEW)
25
A9
A11
A2 10
24 OE
A1 11
23 A10
A0 12
22 CE
I/O0
13
14
15 16 17 18 19 20 21
I/O7
3856 FHD F03
30
A6
A5
5 4 3 2 32 31 29
6 1 28
A8
A9
A4 7
27 A11
A3
A2
8 26
9
X28C513
(TOP VIEW)
25
NC
OE
A1 10
24 A10
A0 11
23 CE
NC 12
22 I/O7
I/O0
13
14
15 16 17 18 19 20 21
I/O6
3856 FHD F04
© Xicor, Inc. 1991, 1995, 1996 Patents Pending
3856-3.2 8/5/97 T1/C0/D0 EW
1
Characteristics subject to change without notice

X28C513
X28C512/X28C513
PIN DESCRIPTIONS
Addresses (A0–A15)
The Address inputs select an 8-bit memory location
during a read or write operation.
Chip Enable (CE)
The Chip Enable input must be LOW to enable all read/
write operations. When CE is HIGH, power consumption
is reduced.
Output Enable (OE)
The Output Enable input controls the data output buffers
and is used to initiate read operations.
Data In/Data Out (I/O0–I/O7)
Data is written to or read from the X28C512/513 through
the I/O pins.
Write Enable (WE)
The Write Enable input controls the writing of data to the
X28C512/513.
FUNCTIONAL DIAGRAM
PIN NAMES
Symbol
A0–A15
I/O0–I/O7
WE
CE
OE
VCC
VSS
NC
A7–A15
X BUFFERS
LATCHES AND
DECODER
512K-BIT
E2PROM
ARRAY
Description
Address Inputs
Data Input/Output
Write Enable
Chip Enable
Output Enable
+5V
Ground
No Connect
3856 PGM T01
A0–A6
Y BUFFERS
LATCHES AND
DECODER
CE
OE
WE
VCC
VSS
CONTROL
LOGIC AND
TIMING
I/O BUFFERS
AND LATCHES
I/O0–I/O7
DATA INPUTS/OUTPUTS
3856 FHD F05
2


Features X28C512/X28C513 512K X28C512/X28C513 5 Volt, Byte Alterable E2PROM 64K x 8 Bi t FEATURES • Access Time: 90ns • S imple Byte and Page Write —Single 5V Supply — No External High Voltages or VPP Control Circuits —Self-Timed — No Erase Before Write —No Complex Pro gramming Algorithms —No Overerase Pro blem • Low Power CMOS: —Active: 50m A —Standby: 500µA • Software Data Protection —Protects Data Against Sys tem Level Inadvertant Writes • High S peed Page Write Capability • Highly R eliable Direct Write™ Cell —Enduran ce: 100,000 Write Cycles —Data Retent ion: 100 Years • Early End of Write D etection —DATA Polling —Toggle Bit Polling • Two PLCC and LCC Pinouts X28C512 —X28C010 E2PROM Pin Compati ble —X28C513 —Compatible with Lower Density E2PROMs DESCRIPTION The X28C51 2/513 is an 64K x 8 E2PROM, fabricated with Xicor’s proprietary, high perfor mance, floating gate CMOS technology. L ike all Xicor programmable nonvolatile memories the X28C512/513.
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