BSP320

BSP 320 S SIPMOS ® Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 60 V ID 2.9 A RDS(on) 0.12 Ω Package Marking Ordering Code BSP 320 S SOT-223 Q67000-S4001 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 25 °C TA = 100 °C ID A 2.9 1.85 DC drain current, pulsed TA = 25 °C IDpuls 11.6 E AS Avalanche energy, single pulse ID = 2.9 A, V DD = 25 V, RGS = 25 Ω L = 14.3 mH, Tj = 25 °C mJ 60 E AR IAR Avalanche energy, periodic limited by Tj(max) Avalanche current, repetitive,limited by Tj(max) Reverse diode dv /dt IS = 2.9 A, VDS = 40 V, di/dt = 200 A/µs Tjmax = 150 °C 0.18 2.9 A KV/µs dv /dt 6 V GS P tot Gate source voltage Power dissipation TA = 25 °C ± 20 1.8 V W Semiconductor Group 1 29/01/1998 BSP 320 S Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA RthJS -55 ... + 150 -55 ... + 150 °C ≤ 70 17 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection *) MIL STD 883, Method 3015, Class 2 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj =...