SIPMOS® Small-Signal-Transistor Features • N channel
•
BSP 320S
VDS RDS(on) ID
4
Product Summary Drain source voltage ...
SIPMOS® Small-Signal-
Transistor Features N channel
BSP 320S
VDS RDS(on) ID
4
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current 60 0.12 2.9 V Ω A
Enhancement mode
Avalanche rated dv/dt rated
3 2 1
VPS05163
Type BSP320S
Package SOT-223
Ordering Code Q67000-S4001
Pin 1 G
Pin 2/4 D
Pin 3 S
Maximum Ratings , at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Pulsed drain current Symbol Value 2.9 11.6 60 2.9 0.18 6 mJ A mJ kV/µs Unit A
ID IDpulse EAS IAR EAR
dv/dt
T A = 25 ˚C
Avalanche energy, single pulse
I D = 2.9 A, V DD = 25 V, R GS = 25 Ω
Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
I S = 2.9 A, V DS = 20 V, di/dt = 200 A/µs, T jmax = 150 ˚C
Gate source voltage Power dissipation
VGS Ptot Tj Tstg
±20 1.8 -55 ... +150 -55 ... +150 55/150/56
V W ˚C
T A = 25 ˚C
Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1
Data Sheet
1
05.99
BSP 320S
Electrical Characteristics Parameter at Tj = 25 ˚C, unless otherwise specified Thermal Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. 17 110 max. 70 K/W K/W Unit
RthJS RthJA
-
Static Characteristics Drain- source breakdown voltage
V(BR)DSS VGS(th) IDSS
60 2.1
3
4
V
VGS = 0 V, I D = 0.25 mA
Gate threshold voltage, VGS = VDS I D = 20...
