Understanding MOSFET. VN0106N5 Datasheet

VN0106N5 MOSFET. Datasheet pdf. Equivalent

VN0106N5 Datasheet
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Part VN0106N5
Description Understanding MOSFET
Feature VN0106N5; "§upertexinc. Understanding MOSFET Data The following outline explains how to read and use Superte.
Manufacture Supertex
Datasheet
Download VN0106N5 Datasheet




Supertex VN0106N5
"§upertexinc.
Understanding MOSFET Data
The following outline explains how to read and use Supertex
MOSFET data sheets. The approach is simple and care has been
taken to avoid getting lost in a maze of technical jargon.
The VNOI A data sheet was chosen as an example because this
is one of the most popular devices and has the largest choice of
packages. The product nomenclature shown applies only to'
Supertex proprietary products.
'Iftl:I.!
iu
p
e
r
t
e
x
-
'DC
.
VN01A
~ JJ
Device Structure
V: Vertical DMOS
(discretes & quads)
T: Low threshold
vertical DMOS
discretes
A: Lateral DMOS
arrays
Type of Channel
N Channel, or
P Channel
Design
Supertex Family
number
Voltage Range
Suffix
Min BVosslvoltsl
L: 20, 40
A: 40, 60, 90, 100
C: 160, 200, 240
D: 350, 400
E: 450, 500
F: 550, 600
• Some A range devices not
available in 40, 90 & 100V
• Some C range devices not
available in 240V
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors util-
ize a vertical DMOS structure and Supertex's well-proven silicon-
gate manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors and with
the high input impedance and negative temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
This section outlines main
features of the product
"---Product Summary
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex vertical DMOS power FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capacitance, and
fast switching speed are desired.
12'\ N-Channel Enhancement-Mode
\;:!31 Vertical DMOS Power FET s
BY... ' R"stOM) ID(ON)
BVOQ8 (max) (min)
40V 30 2.OA
6f1V 30 2.0A
90V 30 2.0A
T0-39
VN0104N2
VN0106N2
VN0109N2
TO-82
VN0104N3
VN0106N3
VN0108N3
T0.52
VN0104N9
VN0106N9
VN0109N9
Order . . . . - I Package
TO-22O Quad POP Quad COP Quad CI..CC DICE
VN0104N5 VN0104N6 VN0104N7 - VN0104NO
VN0106N5 VN0106N6 VN0106N7 VN0106NE VN0106NO
VN0109N5
VN0109NE VN0109NO
II I
Drain to source breakdown
voltage & drain to gate
breakdown voltage
Maximum resistance from
drain to source when device
is fully turned on
Minimum drain current when
device is fully turned on



Supertex VN0106N5
Package Options
TO-39
Hermetic metal can
• Moderate power
dissipation
• Industrial/Military
applications
Plastic TO·92
,. Low power
• Mainly commercial
applications
• Cost effective
TO-52
Hermetic metal can
Low power
Industrial/Military
applications
TO·220
Plastic
• High power
• Commercial/
Industrial
applications
~
. ;.c
":J ifj'
Dual in line plastic
• 4 dice in one package
• Commercial/Industrial
applications
BV""" RDS(IlN)
BV""" (max)
40V 30
60V 3Q
90V 30
1_
(min)
2.0A
2.0A
2.0A
Order Number I Packa e
T()'39
T()'92
T()'52 TO-22Q QuadP-DIP Quade-DIP Quade-Lee Dice
VN0104N2 VN0104N3 VN0104N9 VN0104N5 VN0104N6 VN0104N7
VN0104ND
VN0106N2 VN0106N3 VN0106N9 VN0106N5 VN0106N6 VN0106N7 VN0106NE VN0106ND
VN0109N2 VN0109N3 VN0109N9 VN0109N5
VN0109ND
NO: Die in waffle pack
Die can be visually
inspected to
commercial (standard)
or military visual
criteria (specify
while ordering).
..
16·TERMINAL Lee
Ceramic Leadle" Chip Carrier
• 4 dice in one package
TO-3
Hermetic metal can
• Very high power
• Commercial/lndustrial/
Military requirements
'4.LEAD DIP
Dual in line ceramic
.4 dice in one package
Industrial/Military
requirements
NW: Die in wafer form
• 4" diameter wafers
• Reject die are inked
Extreme conditions a device can be
subjected to electrically and thermally.
Stress in excess of these ratings will
usually cause permanent damage.
Ratings given in product summary
VGS
• All Supertex FETs are rated for ±20V
• ± voltage handling capability allows quick
turn off by reversing bias.
• External protection should be used when
there is a possibility of exceeding this
rating. Stress exceeding ±20V will result
in gate insulation degradation and eventual
failure.
I
I
.. Absolute Maximum Ratings
i"'"'- Drain-to-Source Voltage
___ Drai n-to-Gate
Gate-to-Source Voltage
r-Operating and Storage Temperature
Soldering Temperature
BVDGS
±20V
-55°C to +150°C
• All Supertex devices can be stored and operated satisfactorily
within these junction temperature (TJ) limits
• Appropriate derating factors from curves and change in
parameters due to reduced/elevated temperatures have to be
considered when temperature in not 25° C
• Operation at TJ below maximum limit can enhance operating life
6-1
Maximum allowable temperature at leads
while soldering, 1.6mm away from case for 10
seconds.



Supertex VN0106N5
Thermal Characteristics
Device characteristics affecting
limits of heat produced and removed
from device. Die size, ROS{ON), and
packaging type are the main factors
determining these thermal
limitations.
/lja
Thermal resistance from
junction to air.
Depends mainly on
package and die size.
/lje
Thermal resistance from junction to
- case.
Depends mainly on
package and die size
To determine TJ use equation
TJ = Po x lIie + TA
Pac:kqll
TO-39
TO-92
T()'52
TO·22O
Plastic DIP
Ceramic DIP
IDlcontinuousl
(Note 3)
O.SA
a.SA
a.SA
1.M
IDlpulMdl
Power Dissipation
.TC"~C
~.
.c!w
,~
'C/W
2.SA
2.0A
12'2.0A
7. 12'2.5A
3.SW
I.OW
I.OW
lS.OW
125 36
170
17.
8
See OMOS Arrays and Special Functions section.
lOR
.08A
C,SA
C.SA
I.SA
IORM
2.SA
2.0A
2.0A
2,SA
J
10RM
10 (continuous)
Maximum Continuous current carrying
capability of device.
Depends mainly on:
A. ROS{ON) - on state resistance
B. PO - maximum power
dissipation for package
C. Die size
D. Maximum junction temperature
300 ,..5, 2% duty cycle pulsed
Current handling capability of drain
to source diode.
Factors affecting this
parameter same as 10 (pulsed)
lOR
Continuous current handling
capability of drain to source diode.
Factors affecting value same as
10 (continuous)
10 (pulsed)
Maximum non-continuous pulse current
carrying capabilty for a 300,..5 2% duty
cycle pulse.
Depends mainly on:
A. ROS{ON)
B. Po max.
C. Diameter of bonding wire
D. Die size
E. Maximum junction temperature
-
Power Dissipation
Maximum power package
can dissipate when case
temperature is 25°C.
When case temperature is
higher than 25° C, use
PO vs. Tc curve to
determine dissipation
permissible.
6-2







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