BSP324

BSP 324 SIPMOS ® Small-Signal Transistor N channel Enhancement mode VGS(th) = 1.5 ...2.5 V Pin 1 G Type BSP 324 Type BSP 324 Pin 2 D Pin 3 S Pin 4 D VDS 400 V ID 0.17 A RDS(on) 25 Ω Package SOT-223 Marking BSP 324 Ordering Code Q67000-S215 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 400 400 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current ± 14 ± 20 A 0.17 TA = 33 °C DC drain current, pulsed IDpuls 0.68 TA = 25 °C Power dissipation Ptot 1.7 W TA = 25 °C Semiconductor Group 1 Sep-12-1996 BSP 324 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 72 ≤ 12 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 400 2 10 8 10 20 2.5 100 50 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 1.5 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS nA µA nA Ω 25 VDS = 400 V, VGS = 0 V, Tj = 25 °C VDS...