TN01A

(1) !iupertex inc. TN01A N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVDSS 1 BVDClS SOV 100V RDS(ON) (max) 30 30 IDlON) (min) 2A 2A VGS(lh) (max) l.SV 1.SV TQ-39 TN010SN2 TN0110N2 Order Number I Package TQ-92 DICE TN010SN3 TN010SND TN0110N3 TN0110ND Features 0 Low threshold 0 High input impedance 0 Low input capacitance 0 Fast switching speeds 0 Low on resistance 0 Freedom from secondary breakdown 0 Low input and output leakage Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyinduced secondary breakdown. Supertex Vertical DMOS Power FET...