TP01L

o §upertexinc. TP01L P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOGS -20V -40V ROS(ON) (max) 4.00 4.00 IO(ON) (min) -0.85A -0.85A TO-39 Order Number I Package TO-92 TP0102N2 TP0102N3 TP0104N2 TP0104N3 DICE TP0102ND TP0104ND Features D Low threshold D High input impedance D Low input capacitance D Fast switching speeds D Low on resistance D Freedom from secondary breakdown D Low input and output leakage D Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyinduced secondary breakdown. Superte...