TP06A

o §upertexinc. TP06A P-Channel Enhancement-Mode Vertical CMOS Power FETs Ordering Information BVoss I ROS(ON) BVOGS (max) -60V 3.50 IO(ON) (min) -1.SA -100V 3.S0 -1.SA VGS(th) (max) -2.4V -2.4V TO·39 TP0606N2 TP0610N2 Features o Low threshold o High input impedance o Low input capacitance o Fast switching speeds o Low on resistance o Freedom from secondary breakdown o Low input and output leakage TO·92 TP0606N3 TP0610N3 Order Number I Package TO·220 Quad P·DIP TP0606NS TP0606N6 TP0610NS - Quad C·DIP TP0606N7 - DICE TP0606ND TP0610ND Advanced CMOS Technology These enhancement-mode (normally-off) power transistors util· ize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from th...