Document
o §upertexinc.
TP06A
P-Channel Enhancement-Mode Vertical CMOS Power FETs
Ordering Information
BVoss I ROS(ON) BVOGS (max)
-60V 3.50
IO(ON) (min)
-1.SA
-100V 3.S0 -1.SA
VGS(th) (max)
-2.4V
-2.4V
TO·39 TP0606N2 TP0610N2
Features
o Low threshold o High input impedance o Low input capacitance o Fast switching speeds o Low on resistance o Freedom from secondary breakdown o Low input and output leakage
TO·92 TP0606N3 TP0610N3
Order Number I Package TO·220 Quad P·DIP
TP0606NS TP0606N6
TP0610NS
-
Quad C·DIP
TP0606N7
-
DICE TP0606ND TP0610ND
Advanced CMOS Technology
These enhancement-mode (normally-off) power transistors util· ize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from th.