P-Channel Enhancement-Mode Vertical DMOS FETs
TP0606 TP0610
Low Threshold
P-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / RDS(ON) BVDGS ...
Description
TP0606 TP0610
Low Threshold
P-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / RDS(ON) BVDGS (max)
-60V 3.5Ω
ID(ON) (min)
-1.5A
VGS(th) (max)
-2.4V
Order Number / Package
TO-39
TO-92
TO-220
—
TP0606N3
TP0606N5
-100V 3.5Ω -1.5A
* 14 pin side brazed ceramic DIP
** 14-pin plastic DIP
-2.4V
TP0610N2
TP0610N3
—
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information.
Features
s Low threshold — -2.4V max s High input impedance s Low input capacitance — 80pF typical s Fast switching speeds s Low on resistance s Free from secondary breakdown s Low input and output leakage s Complementary N- and P-channel devices
Applications
s Logic level interfaces – ideal for TTL and CMOS s Solid state relays s Battery operated systems s Photo voltaic drives s Analog switches s General purpose line drivers s Telecom switches
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-...
Similar Datasheet