TN0102

TN0102 TN0104 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 20V RDS(ON) (max) 1.8Ω VGS(th) (max) 1.6V ID(ON) (min) 2.0A 40V 1.8Ω 1.6V 2.0A 40V 2.0Ω 1.6V 2.0A * Same as SOT-89. Product supplied on 2000 piece carrier tape reels. † MIL visual screening available Features Low threshold —1.6V max. High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices Applications Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage BVDSS BVDGS ± 20V Operating and Storage Temperature -55°C to +150°C Soldering Temperature* 300°C * For TO-39 and TO-92, distance of 1.6 mm from case for ...