R520

! i u p e r t e x ._n c . " IRF520 IRF521 IRF522 IRF523 R520 R521 N-Channel Enhancement-Mode Vertical DMOS Power FETs Preliminary Ordering Information BVossl BVDGS IOOV 60V 100V 60V RDS(ON) (max) 0.30 0.30 0.40 0.40 ID(ON) (min) 8.0A 8.0A 7.0A 7.0A Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-qhannel devices Order Number I Package TO-220 To-92 IRF520 IRF521 IRF522 IRF523 R520 R521 - Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all M...