(JJ §upertex inc.
N-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BVoss I BVOGS
SOV
ROS(ON)...
(JJ §upertex inc.
N-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BVoss I BVOGS
SOV
ROS(ON) (max)
O.18!l
IO(ON) (min)
12.0A
Order Number I Package
ITO-39
TO-92
IIRF531
R531
IRF531 R531
Preliminary
Features
o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain
Advanced DMOS Technology
These enhancement-mode (normally-off) power
transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyinduced secondary breakdown.
Supertex Vertical DMOS Power FETs are ideal...