VN05D

~ 'tlI §upertexinc. VN05D N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVDGS 350V 400V ROS(ON) (max) 35Q 35Q IO(ON) (min) 250mA 250mA TO-39 Order Number I Package T0092 Diea VN0535N2 VN0535N3 VN0535ND VN0540N2 VN0540N3 VN0540ND Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runawa...