Document
– OVBNSO05L4E0TE –
VN0535 VN0540
N-Channel Enhancement-Mode Vertical DMOS FETs
Ordering Information
BVDSS / BVDGS 350V
400V
† MIL visual screening available
RDS(ON) (max)
35Ω 35Ω
ID(ON) (min)
250mA
250mA
Order Number / Package
TO-39
TO-92
Die†
VN0535N2
VN0535N3
VN0535ND
—
VN0540N3
VN0540ND
7
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information.
Features
■ Free from secondary breakdown ■ Low power drive requirement ■ Ease of paralleling ■ Low CISS and fast switching speeds ■ Excellent thermal stability ■ Integral Source-Drain diode ■ High input impedance and high gain ■ Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the .