BSP 372
SIPMOS ® Small-Signal Transistor
• N channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = 0.8...
BSP 372
SIPMOS ® Small-Signal
Transistor
N channel Enhancement mode Logic Level Avalanche rated VGS(th) = 0.8 ...2.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D
Type
VDS
100 V
ID
1.7 A
RDS(on)
0.31 Ω
Package
Marking
BSP 372
Type BSP 372
SOT-223
Ordering Code Q 67000-S300
Tape and Reel Information E6327
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TA = 28 ˚C
ID
A 1.7
DC drain current, pulsed
TA = 25 ˚C
IDpuls
6.8
EAS
Avalanche energy, single pulse
ID = 1.7 A, VDD = 25 V, RGS = 25 Ω L = 23.3 mH, Tj = 25 ˚C
mJ
45
VGS Vgs Ptot
Gate source voltage Gate-source peak voltage,aperiodic Power dissipation
TA = 25 ˚C
± 14 ± 20
V
W 1.8
Data Sheet
1
05.99
BSP 372
Maximum Ratings Parameter Symbol Values Unit
Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) IEC climatic category, DIN IEC 68-1
Tj Tstg RthJA RthJS
-55 ... + 150 -55 ... + 150
˚C
≤ 70 ≤ 10
55 / 150 / 56
K/W
1)
Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 0 ˚C
V (BR)DSS
V 100 -
Gate threshold voltage
VGS=VDS, ID = 1 mA
V GS(th)
0.8
IDSS
1.4
2 µA
Zero gate voltage drain current
VDS = 100 V, V GS = 0 V, Tj = 25 ˚C VDS = 100 V, V GS...