BSP 373
SIPMOS ® Small-Signal Transistor
• N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V
Pin...
BSP 373
SIPMOS ® Small-Signal
Transistor
N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 V
Pin 1 G
Pin 2 D
Pin 3 S
Pin 4 D
Type
VDS
100 V
ID
1.7 A
RDS(on)
0.3 Ω
Package
Marking
BSP 373
Type BSP 373
SOT-223
BSP 373
Ordering Code Q67000-S301
Tape and Reel Information E6327
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TA = 28 ˚C
ID
A 1.7
DC drain current, pulsed
TA = 25 ˚C
IDpuls
6.8
EAS
Avalanche energy, single pulse
ID = 1.7 A, VDD = 25 V, RGS = 25 Ω L = 23.3 mH, Tj = 25 ˚C
mJ
45
VGS Ptot
Gate source voltage Power dissipation
TA = 25 ˚C
± 20
1.8
V W
Data Sheet
1
05.99
BSP 373
Maximum Ratings Parameter Symbol Values Unit
Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
1)
Tj Tstg RthJA R thJS
-55 ... + 150 -55 ... + 150
˚C
≤ 70 ≤ 10
E 55 / 150 / 56
K/W
1)
Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 0 ˚C
V (BR)DSS
V 100 -
Gate threshold voltage
VGS=VDS, ID = 1 mA
V GS(th)
2.1
IDSS
3
4 µA
Zero gate voltage drain current
VDS = 100 V, V GS = 0 V, Tj = 25 ˚C VDS = 100 V, V GS = 0 V, Tj = 125...