BSP 40 ... BSP 43 NPN
Switching Transistors NPN
Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransi...
BSP 40 ... BSP 43
NPN
Switching
Transistors
NPN
Surface mount Si-Epitaxial Planar
Transistors Si-Epitaxial Planar
Transistoren für die Oberflächenmontage Power dissipation – Verlustleistung
1.65
4
±0.2 ±0.3
6.5 ±0.1 3
±0.2
1.3 W SOT-223 0.04 g
Plastic case Kunststoffgehäuse
3.5
Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
1
0.7 2.3
2
3
3.25
Dimensions / Maße in mm 1 = B 2, 4 = C 3 = E
Maximum ratings (TA = 25/C)
7
Grenzwerte (TA = 25/C) BSP 40 BSP 41 BSP 42 BSP 43 80 V 90 V 5V 1.3 W 1) 1A 2A 200 mA 150/C - 65…+ 150/C Kennwerte (Tj = 25/C) Min. Typ. – – – – – Max. 100 nA 50 :A 100 nA 250 mV 500 mV
Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc)
B open E open C open
VCE0 VCB0 VEB0 Ptot IC ICM IBM Tj TS
60 V 70 V
Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur
Characteristics (Tj = 25/C) Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 60 V IE = 0, VCB = 60 V, Tj = 150/C Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IEB0 VCEsat VCEsat – – – Collector saturation volt. – Kollektor-Sättigungsspg. 2) ICB0 ICB0 – –
1
) M...