VN06F

"§upertexinc. VN06F N-Channel Enhancement-Mode Vertical CMOS Power FETs Ordering Information BVoss ' BVDGS 550V 600V RDs(ON) (max) 200 200 'OlON) (min) 0.25A 0.2SA TO-39 VN0655N2 VN0660N2 Order Number' Package T0-92 T0-220 VN0655N3 VN065SNS VN0660N3 VN0660NS Dice VN06SSND VN0660ND Features D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free fro...