M29W064FB

M29W064FT M29W064FB 64-Mbit (8 Mbit x8 or 4 Mbit x16, page, boot block) 3 V supply flash memory Preliminary Data Features „ Supply voltage – VCC = 2.7 V to 3.6 V for program, erase, read – VPP =12 V for fast program (optional) „ Asynchronous random/page read – Page width: 4 words – Page access: 25 ns – Random access: 60, 70 ns „ Programming time – 10 μs per byte/word typical – 4 words/8 bytes program „ 135 memory blocks – 1 boot block and 7 parameter blocks, 8 Kbytes each (top or bottom location) – 127 main blocks, 64 Kbytes each „ Program/erase controller – Embedded byte/word program algorithms „ Program/erase suspend and resume – Read from any block during program suspend – Read and program another block during erase suspend „ Unlock Bypass Program command – Faster production/batch programming „ VPP/WP pin for fast program and write protect „ Temporary block unprotection mode „ Common flash interface – 64-bit security code Table 1. Device sum...