BSP51

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BSP50; BSP51; BSP52 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 22 1999 Apr 23 Philips Semiconductors Product specification NPN Darlington transistors FEATURES High current (max. 1 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS Industrial high gain amplification. PINNING PIN 1 2,4 3 BSP50; BSP51; BSP52 DESCRIPTION base collector emitter 4 2, 4 DESCRIPTION NPN Darlington transistor in a SOT223 plastic package. PNP complements: BSP60, BSP61 and BSP62. 1 Top view 2 3 MAM265 1 3 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSP50 BSP51 BSP52 VCES collector-emitter voltage BSP50 BSP51 BSP52 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature open collector VBE = 0 − − − − − − − Tamb ≤ 25 °C; note 1 − −65 − −65 45 60 80 5 1 2 100 1.25 +150 150 +150 V V V V A A mA W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − − 60 80 90 V V V MIN. MAX. UNIT ...