BSP51

NPN Silicon Darlington Transistors High collector current Low collector-emitter saturation voltage Complementary types: BSP60 - BSP62 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 BSP50-BSP52 43 2 1 Type BSP50 BSP51 BSP52 Marking BSP50 1=B BSP51 1=B BSP52 1=B Pin Configuration 2=C 3=E 4=C 2=C 3=E 4=C 2=C 3=E 4=C - - Package SOT223 SOT223 SOT223 Maximum Ratings Parameter Collector-emitter voltage BSP50 BSP51 BSP52 Collector-base voltage BSP50 BSP51 BSP52 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Total power dissipationTS ≤ 124 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IB Ptot Tj Tstg Value 45 60 80 60 80 90 5 1 2 100 1.5 150 -65 ... 150 Unit V A mA W °C 1 2011-10-05 BSP50-BSP52 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 17 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BSP50 IC = 10 mA, IB = 0 , BSP51 IC = 10 mA, IB = 0 , BSP52 V(BR)CEO 45 60 80 - - Collector-base breakdown voltage IC = 100 µA, IE = 0 , BSP50 IC = 100 µA, IE = 0 , BSP51 IC = 100 µA, IE = 0 , BSP52 V(BR)CBO 60 80 90 - - Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-emitter cutoff current VCE = VCE0max, VBE = 0 Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain2) IC = 15...