BSP52

BSP52 BSP52 NPN Darlington Transistor This device is designed for applications requiring extremly high current gain at collector currents to 500mA. Sourced from process 03. 2 1 4 3 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VCES VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 80 90 5 800 - 55 ~ +150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Symbol Off Characteristics V(BR)CBO V(BR)EBO ICES IEBO hFE VCE(sat) VBE(sat) Parameter Test Conditions IC = 100µA, IE = 0 IE = 10µA, IC = 0 VCE = 80V, VBE = 0 VEB = 4.0V, IC = 0 IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 500mA, IB = 0.5mA IC = 500mA, IB = 0.5mA 1000 2000 1.3 1.9 V V Min. 90 5 10 10 Typ. Max. Units V V µA µA Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage On Characteristics Thermal Characteristics TA=25°C unless oth...