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BSP613P

Infineon Technologies AG

SIPMOS Small-Signal-Transistor

SIPMOS® Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Avalanche rated • dv/dt rated • Ideal for fast ...


Infineon Technologies AG

BSP613P

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Description
SIPMOS® Small-Signal-Transistor Feature P-Channel Enhancement mode Avalanche rated dv/dt rated Ideal for fast switching buck converter Qualified according to AEC Q101 Halogen­free according to IE C 61249­2­21 BSP613P Product Summary VDS RDS(on) ID -60 0.13 -2.9 V Ω A PG-SOT223 Gate pin1 Drain pin 2,4 Source pin 3 Type BSP613P Package PG-SOT223 Tape and reel Packaging H6327: 1000pcs/r. Non  Dry Marking BSP613P Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TA=25°C ID TA=70°C Pulsed drain current TA=25°C Avalanche energy, single pulse ID=2.9 A , VDD=-25V, RGS=25Ω ID puls EAS Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt EAR dv/dt IS=2.9A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj , Tstg ESD Class JESD22-A114-HBM Value -2.9...




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