BSP62

PNP Silicon Darlington Transistors BSP 60 … BSP 62 High collector current q Low collector-emitter saturation voltage q Complementary types: BSP 50 … BSP 52 (NPN) q Type BSP 60 BSP 61 BSP 62 Marking BSP 60 BSP 61 BSP 62 Ordering Code (tape and reel) Q62702-P1166 Q62702-P1167 Q62702-P1168 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Total power dissipation, TS = 124 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCER VCB0 VEB0 IC ICM IB Ptot Tj Tstg Values Unit BSP 60 BSP 61 BSP 62 45 60 60 80 5 1 2 0.1 1.5 150 – 65 … + 150 W ˚C A 80 90 V 72 17 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BSP 60 … BSP 62 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage1) IC = 10 mA, RBE = 150 Ω BSP 60 BSP 61 BSP 62 Collector-base breakdown voltage IC = 100 µA, IB = 0 BSP 60 BSP 61 BSP 62 Emitter-base breakdown voltage IE = 100 µA, IB = 0 Collector-emitter cutoff current VCE = VCERmax, VBE = 0 Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain2) IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V Collector-emitter satur...