BSP62

BSP60 ... BSP62 PNP Silicon Darlington Transistors
High collector current
Low collector-emitter saturation voltage
Complementary types: BSP50 ... BSP52 (NPN) 4 3 2 1 VPS05163 Type BSP60 BSP61 BSP62 Maximum Ratings Parameter Marking BSP 60 BSP 61 BSP 62 1=B 1=B 1=B Pin Configuration 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C Package SOT223 SOT223 SOT223 Symbol VCEO VCBO VEBO IC ICM IB Ptot Tj Tstg BSP60 45 60 5 BSP61 60 80 5 1 2 100 1.5 150 -65 ... 150 BSP62 80 90 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Total power dissipation , TS = 124 °C Junction temperature Storage temperature A mA W °C Thermal Resistance Junction - soldering point 1) RthJS
17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BSP60 ... BSP62 Electrical Characteristics at TA = 25°C, unless othertwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO typ. max. Unit V 45 60 80 - BSP60 BSP61 BSP62 V(BR)CBO Collector-base breakdown voltage IC = 100 µA, IE = 0 BSP60 BSP61 BSP62 60 80 90 V(BR)EBO ICES IEBO hFE - 10 10 µA Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-emitter cutoff current VCE = VCEOmax , VBE = 0 Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V Collector-emitter saturation voltage1) IC...