Preliminary data
BSP 92 P
SIPMOS Small-Signal-Transistor
Feature • P-Channel • Enhancement mode • Logic Level • dv/dt...
Preliminary data
BSP 92 P
SIPMOS Small-Signal-
Transistor
Feature P-Channel Enhancement mode Logic Level dv/dt rated
Product Summary VDS RDS(on) ID -250 12 -0.26
SOT-223
Drain pin 2/4 Gate pin1 Source pin 3
2 1
VPS05163
V Ω A
4
3
Type BSP 92 P
Package SOT-223
Ordering Code Q67042-S4169
Tape and Reel Information -
Marking BSP92P
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TA=25°C TA=70°C
Symbol ID
Value -0.26 -0.23
Unit A
Pulsed drain current
TA=25°C
ID puls dv/dt VGS Ptot Tj , Tstg
-1.04 6 ±20 1.8 -55... +150 55/150/56 kV/µs V W °C
Reverse diode dv/dt
IS =-0.26A, VDS =-200V, di/dt=-200A/µs, Tjmax =150°C
Gate source voltage Power dissipation
TA=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-07-25
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
1)
BSP 92 P
Symbol min. RthJS RthJA -
Values typ. 15 max. 25
Unit
K/W
80 48
115 70
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0, ID=-250µA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) RDS(on) -250 -1
Values typ. -1.5 max. -2
Unit
V
Gate threshold voltage, VGS = VDS
ID =-130µA
Zero gate voltage drain current
VDS =-250V, VGS =0, Tj =25°C VDS =-250V, VGS =0, Tj =1...