BSR12

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR12 PNP switching transistor Product specification 1999 Jul 23 Philips Semiconductors Product specification PNP switching transistor FEATURES Low current (max. 100 mA) Low voltage (max. 15 V). APPLICATIONS High-speed, saturated switching applications for industrial service in thick and thin-film circuits. Top view handbook, halfpage BSR12 3 3 1 2 1 2 MAM256 DESCRIPTION PNP switching transistor in a SOT23 plastic package. PINNING PIN 1 2 3 base emitter collector DESCRIPTION MARKING TYPE NUMBER BSR12 MARKING CODE B5p Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot Tj hFE fT toff PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation junction temperature DC current gain transition frequency turn-off time IC = −10 mA; VCE = −1 V IC = −50 mA; VCE = −1 V f = 500 MHz; IC = −50 mA; VCE = −10 V Tamb ≤ 25 °C open emitter open base CONDITIONS − − − − − 30 30 1.5 MIN. MAX. −15 −15 −200 250 150 − 120 − 30 GHz ns V V mA mW °C UNIT ICon = −30 mA; IBon = −3 mA; IBoff = 3mA − 1999 Jul 23 2 Philips Semiconductors Product specification PNP switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipat...