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BSR17A

Diotec Semiconductor

Surface mount Si-Epitaxial PlanarTransistors

BSR 17A NPN Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die ...


Diotec Semiconductor

BSR17A

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Description
BSR 17A NPN Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 1.1 NPN 250 mW SOT-23 (TO-236) 0.01 g 0.4 3 Plastic case Kunststoffgehäuse 1.3 ±0.1 Type Code 1 2 2.5 max Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Maße in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temp. – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM Tj TS Grenzwerte (TA = 25/C) BSR 17A 40 V 60 V 6V 250 mW 1) 100 mA 200 mA 100 mA 150/C - 65…+ 150/C Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 30 V IE = 0, VCB = 30 V, Tj = 150/C Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 6 V IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA IEB0 VCEsat VCEsat – – – ICB0 ICB0 – – Kennwerte (Tj = 25/C) Typ. – – – – – Max. 50 nA 5 :A 30 nA 200 mV 200 mV Collector saturation volt. – Kollektor-Sättigungsspg. 1) 1 ) Mounted on P.C. board with 3 mm2 copper pad at each ter...




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