BSR 17A NPN
Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die ...
BSR 17A
NPN
Switching
Transistors Surface mount Si-Epitaxial Planar
Transistors Si-Epitaxial Planar
Transistoren für die Oberflächenmontage Power dissipation – Verlustleistung
2.9 ±0.1 1.1
NPN
250 mW SOT-23 (TO-236) 0.01 g
0.4
3
Plastic case Kunststoffgehäuse
1.3 ±0.1
Type Code
1 2
2.5 max
Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
1.9
Dimensions / Maße in mm 1=B 2=E 3=C
Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temp. – Sperrschichttemperatur Storage temperature – Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC ICM IBM Tj TS
Grenzwerte (TA = 25/C) BSR 17A 40 V 60 V 6V 250 mW 1) 100 mA 200 mA 100 mA 150/C - 65…+ 150/C
Characteristics (Tj = 25/C) Min. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 30 V IE = 0, VCB = 30 V, Tj = 150/C Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 6 V IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA IEB0 VCEsat VCEsat – – – ICB0 ICB0 – –
Kennwerte (Tj = 25/C) Typ. – – – – – Max. 50 nA 5 :A 30 nA 200 mV 200 mV
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
1
) Mounted on P.C. board with 3 mm2 copper pad at each ter...