BSR18

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR18A PNP switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification PNP switching transistor FEATURES Low current (max. 100 mA) Low voltage (max. 40 V). APPLICATIONS High-speed saturated switching. DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: BSR17A. 1 handbook, halfpage BSR18A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 MARKING TYPE NUMBER BSR18A MARKING CODE T92 Top view 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = −10 mA; VCE = −1 V IC = −10 mA; VCE = −20 V; f = 100 MHz ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA open emitter open base CONDITIONS − − − − 100 250 − MIN. MAX. −40 −40 −100 250 300 − 300 MHz ns V V mA mW UNIT 1997 May 28 2 Philips Semiconductors Product specification PNP switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipa...