UPG2301T5L

DISCONTINUED GaAs HBT INTEGRATED CIRCUIT PG2301T5L POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The PG2301T5L is GaAs HBT MMIC for power amplifier which were developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in a 12-pin plastic TSQFN package. And this package is able to high-density surface mounting. FEATURES Operation frequency Supply voltage Control voltage : fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.) : VCC1, 2 = Vbias = 2.7 to 3.6 V (3.3 V TYP.) : Vcont = 0 to 3.6 V (2.5 V TYP.) Circuit current : Venable = 0 to 3.1 V (2.9 V TYP.) : ICC = 120 mA TYP. @ VCC1, 2 = Vbias = 3.3 V, Vcont = 2.5 V, Venable = 2.9 V, Maximum power Pin = +4 dBm : Pout (MAX.) = +23 dBm TYP. @ VCC1, 2 = Vbias = 3.3 V, Vcont = 2.5 V, Venable = 2.9 V, Gain Control Range Pin = +4 dBm : GCR = 23 dB TYP. @ VCC1, 2 = Vbias = 3.3 V, Vcont = 0 to 2.5 V, Venable = 2.9 V, Po...