BSR19

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BSR19; BSR19A NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 21 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES Low current (max. 300 mA) High voltage (max. 160 V). APPLICATIONS General purpose switching and amplification Especially used for telephony applications. handbook, halfpage BSR19; BSR19A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. PNP complements: BSR20 and BSR20A. MARKING TYPE NUMBER BSR19 BSR19A MARKING CODE U35 U36 Top view 1 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BSR19 BSR19A VCEO collector-emitter voltage BSR19 BSR19A ICM Ptot hFE peak collector current total power dissipation DC current gain BSR19 BSR19A fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz Tamb ≤ 25 °C IC = 10 mA; VCE = 5 V 60 80 100 − − 300 MHz open base − − − − 140 160 600 250 V V mA mW open emitter − − 160 180 V V CONDITIONS MIN. MAX. UNIT 1997 Apr 21 2 Philips Semiconductors Product specification NPN high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSR19 BSR19A VCEO collector-emitter voltage BSR19 BSR19A VEBO IC ICM IB Ptot Tstg Tj Tamb emitter-base volta...