BRIDGE RECTIFIERS. GBJ1001 Datasheet

GBJ1001 RECTIFIERS. Datasheet pdf. Equivalent

GBJ1001 Datasheet
Recommendation GBJ1001 Datasheet
Part GBJ1001
Description GLASS PASSIVATED BRIDGE RECTIFIERS
Feature GBJ1001; LITE-ON SEMICONDUCTOR GBJ10005 thru GBJ1010 GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - .
Manufacture LITE-ON
Datasheet
Download GBJ1001 Datasheet




LITE-ON GBJ1001
LITE-ON
SEMICONDUCTOR
GBJ10005 thru GBJ1010
GLASS PASSIVATED BRIDGE RECTIFIERS
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 10 Amperes
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability.
Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
The plastic material has UL flammability classification
94V-0
UL Recognition File # E95060
MECHANICAL DATA
Polarity : Symbols molded on body
Weight : 0.23 ounces, 6.6 grams
Mounting position : Any
GBJ
RA
Q
+ ~~
P
I
H
DB
-E
G
LC
M
J
N O OF
K
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
GBJ
MIN. MAX.
29.70 30.30
19.70
17.0
4.70
20.30
18.0
4.90
10.80 11.20
2.30
3.10
2.70
3.40
3.40 3.80
4.40 4.80
2.50 2.90
0.60 0.80
2.00 2.40
0.90
9.80
1.10
10.20
7.30
3.80
7.70
4.20
(3.0) x 45
3.10 3.40
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL GBJ
10005
Maximum Recurrent Peak Reverse Voltage
VRRM
50
Maximum RMS Voltage
VRMS
35
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current@TC =110 C (without heatsink)
VDC
I(AV)
50
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
IFSM
Maximum forward Voltage at 5.0A DC
VF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I 2 t Rating for fusing (t < 8.3ms)
@TJ =25 C
@TJ =125 C
IR
I2 t
Typical Junction
Capacitance per element (Note 1)
CJ
GBJ
1001
100
70
100
GBJ
1002
200
140
200
GBJ
1004
400
280
400
10.0
3.0
170
1.05
10
500
120
55
GBJ
1006
600
420
600
GBJ
1008
800
560
800
GBJ
1010
1000
700
1000
UNIT
V
V
V
A
A
V
uA
A 2S
pF
Typical Thermal Resistance (Note 2)
R0JC
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 150mm x 150mm x 1.6mm Cu Plate Heatsink.
1.4
-55 to +150
-55 to +150
C/W
C
C
REV. 2, 01-Dec-2000, KBDG03



LITE-ON GBJ1001
RATING AND CHARACTERISTIC CURVES
GBJ10005 thru GBJ1010
FIG.1 - FORWARD CURRENT DERATING CURVE
10.0
WITH HEATSINK
8.0
6.0
4.0
WITHOUT HEATSINK
2.0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
1.0
20 40 60 80
100 120
CASE TEMPERATURE , C
140
FIG.3 - TYPICAL JUNCTION CAPACITANCE
100
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
180
160
140
120
100
80
60
40
20
Single Half-Sine-Wave
(JEDEC METHOD)
0
12
5 10 20
50 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
10
1.0
10
TJ = 25 C
0.1
1.0
1.0
TJ = 25 C, f= 1MHz
4.0 10.0
REVERSE VOLTAGE , VOLTS
PULSE WIDTH 300us
.01
100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
1000
TJ = 125 C
100
TJ = 100 C
10
TJ = 50 C
1.0
TJ = 25 C
0.1
0
20
40
60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
REV. 2, 01-Dec-2000, KBDG03







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)