BSR20

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BSR20; BSR20A PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 21 Philips Semiconductors Product specification PNP high-voltage transistors FEATURES Low current (max. 300 mA) High voltage (max. 150 V). APPLICATIONS General purpose switching and amplification Telephony applications. handbook, halfpage BSR20; BSR20A PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 2 DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complements: BSR19 and BSR19A. MARKING TYPE NUMBER BSR20 BSR20A MARKING CODE T35 T36 Top view 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BSR20 BSR20A VCEO collector-emitter voltage BSR20 BSR20A ICM Ptot hFE peak collector current total power dissipation DC current gain BSR20 BSR20A fT transition frequency IC = −10 mA; VCE = −10 V; f = 100 MHz Tamb ≤ 25 °C IC = −10 mA; VCE = −5 V 40 60 100 180 240 − MHz open base − − − − −120 −150 −600 250 V V mA mW open emitter − − −130 −160 V V CONDITIONS MIN. MAX. UNIT 1997 Apr 21 2 Philips Semiconductors Product specification PNP high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSR20 BSR20A VCEO collector-emitter voltage BSR20 BSR20A VEBO IC ICM IB Ptot Tstg Tj Tamb emitter-base voltage colle...