BRIDGE RECTIFIERS. GBJ810 Datasheet

GBJ810 RECTIFIERS. Datasheet pdf. Equivalent

GBJ810 Datasheet
Recommendation GBJ810 Datasheet
Part GBJ810
Description GLASS PASSIVATED BRIDGE RECTIFIERS
Feature GBJ810; LITE-ON SEMICONDUCTOR GBJ8005 thru GBJ810 GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE - 50.
Manufacture LITE-ON
Datasheet
Download GBJ810 Datasheet




LITE-ON GBJ810
LITE-ON
SEMICONDUCTOR
GBJ8005 thru GBJ810
GLASS PASSIVATED BRIDGE RECTIFIERS
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 8.0 Amperes
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop, high current capability.
Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
The plastic material has UL flammability classification
94V-0
UL Recognition File # E95060
MECHANICAL DATA
Polarity : Symbols molded on body
Weight : 0.23 ounces, 6.6 grams
Mounting position : Any
GBJ
RA
Q
+ ~~
P
I
H
DB
-E
G
LC
M
J
N O OF
K
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
GBJ
MIN. MAX.
29.70 30.30
19.70
17.0
4.70
20.30
18.0
4.90
10.80 11.20
2.30
3.10
2.70
3.40
3.40 3.80
4.40 4.80
2.50 2.90
0.60 0.80
2.00 2.40
0.90
9.80
1.10
10.20
7.30
3.80
7.70
4.20
(3.0) x 45
3.10 3.40
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL GBJ8005 GBJ801 GBJ802 GBJ804 GBJ806 GBJ808 GBJ810 UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current @TC=110 C (without heatsink)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
VRRM
VRMS
VDC
I(AV)
IFSM
50
35
50
100 200 400 600 800 1000 V
70 140 280 420 560 700 V
100 200 400 600 800 1000 V
8.0 A
2.9
170 A
Maximum forward Voltage at 4.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I 2 t Rating for fusing (t < 8.3ms)
@TJ =25 C
@TJ =125 C
Typical Junction
Capacitance per element (Note 1)
VF
IR
I2 t
CJ
1.0 V
5.0
500 uA
120 A2S
55 pF
Typical Thermal Resistance (Note 2)
R0JC
1.6 C/W
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 100mm x 100mm x 1.6mm Cu Plate Heatsink.
-55 to +150
-55 to +150
C
C
REV. 2, 01-Dec-2000, KBDG02



LITE-ON GBJ810
RATING AND CHARACTERISTIC CURVES
GBJ8005 thru GBJ810
FIG.1 - FORWARD CURRENT DERATING CURVE
8.0
WITH HEATSINK
7.0
6.0
5.0
4.0
WITHOUT HEATSINK
3.0
2.0 SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
1.0
20 40 60 80
100 120
CASE TEMPERATURE , C
140
FIG.3 - TYPICAL JUNCTION CAPACITANCE
100
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
180
160
140
120
100
80
60
40
20
Single Half-Sine-Wave
(JEDEC METHOD)
0
12
5 10 20
50 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
10
1.0
10
TJ = 25 C
0.1
1.0
1.0
TJ = 25 C, f = 1MHz
4.0 10.0
REVERSE VOLTAGE , VOLTS
PULSE WIDTH 300us
.01
100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
1000
100 TJ = 125 C
TJ = 100 C
10
TJ = 50 C
1.0
TJ = 25 C
0.1
0
20
40
60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
REV. 2, 01-Dec-2000, KBDG02







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