BSR41

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSR40; BSR41; BSR42; BSR43 NPN medium power transistors Product specification Supersedes data of 1997 Apr 07 1999 Apr 28 Philips Semiconductors Product specification NPN medium power transistors FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS Thick and thin-film circuits Telephony and general industrial applications. BSR40; BSR41; BSR42; BSR43 PINNING PIN 1 2 3 emitter collector base DESCRIPTION handbook, halfpage DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complements: BSR30; BSR3 and BSR33. MARKING TYPE NUMBER BSR40 BSR41 MARKING CODE AR1 AR2 TYPE NUMBER BSR42 BSR43 MARKING CODE AR3 AR4 1 Bottom view 2 3 MAM296 2 3 1 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO PARAMETER collector-base voltage BSR40; BSR41 BSR42; BSR43 VCEO collector-emitter voltage BSR40; BSR41 BSR42; BSR43 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − ...