BSR50

BSR50 BSR50 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 0.5A. Sourced from Process 06. 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Storage Temperature Ratings 45 60 5 1.5 -55 ~ 150 Units V V V A °C Electrical Characteristics TA=25°C unless otherwise noted Symbol BVCEO BVCBO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) Parameter Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC = 10mA, IB = 0 IC = 100µA, IB = 0 IE = 100µA, IC = 0 VCB = 45V, IE = 0 VEB = 4.0V, IC = 0 VCE = 10V, IC = 150mA VCE = 10V, IC = 0.5A IC = 500mA, IB = 500µA IC = 1.0A, IB = 4.0mA IC = 500mA, IB = 500µA IC = 1.0mA, IB = 4.0mA 1,000 2,000 1.3 1.6 0.9 2.2 V V Min. 45 60 5 50 50 Typ. Max. Units V V V nA nA Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W ©2002 Fairchild Semiconductor Corporation Rev. A, May 2002 ...