BSR56; BSR57; BSR58
N-channel FETs
Rev. 3 — 25 June 2014
Product data sheet
1. Product profile
1.1 General descripti...
BSR56; BSR57; BSR58
N-channel FETs
Rev. 3 — 25 June 2014
Product data sheet
1. Product profile
1.1 General description
Symmetrical silicon N-channel depletion type junction field-effect
transistors (FETs) in a plastic microminiature envelope designed for application in thick and thin-film circuits. The
transistors are intended for low-power, chopper or switching applications in industrial service.
1.2 Features and benefits
Interchangeable drain and source connections Small package
1.3 Applications
Low-power, chopper or switching applications Thick and thin-film circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source voltage
IDSS
drain leakage current VDS = 15 V; VGS = 0 V;
Tmb = 40 C
VGSoff
gate-source cut-off voltage
VDS = 15 V; ID = 0.5 nA
Crs
feedback capacitance VDS = 0 V; VGS = 10 V;
f = 1 MHz
Switching time (VDD = 10 V; VGS = 0 V)
toff
turn-off time
ID = 20 mA; VGSM = 10 V
ID = 10 mA; VGSM = 6 V
ID = 5 mA; VGSM = 4 V
Ptot
total power dissipation Tmb = 40 °C
Static characteristics
RDSon
drain-source on-state resistance
VGS = 0 V; ID = 0 A; f = 1 kHz
BSR56
Min Max
- 40
- >50
-
-
BSR57 Min Max
- 40 - >20 - <100
BSR58 Unit
Min Max
- 40 V
-
>8 mA
- <80 mA
>4
-
>2
- >0.8 - V
<10 -
<6
-
<4
-V
-
<5
-
<5
-
<5 pF
- <25 -
-
-
- ns
-
-
- <50 -
- ns
-
-
-
-
- <100 ns
- 250 - 250 - 250 mW
- <25 - <40 - <60
NXP Semiconductors
BSR56; BSR57...
