BSR58

BSR58 BSR58 N-Channel Low-Frequency Low-Noise Amplifier This device is designed for low-power chopper or switching application sourced from process 51 2 3 SOT-23 Mark: M6 1. Drain 2. Source 3. Gate 1 Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VDGO VGSO IGF Ptot TSTG TJ Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Power Dissipation up to Tamb=40°C Storage Temperature Range Junction Temperature Value 40 - 40 50 250 - 55 ~ 150 150 Units V V mA mW °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVGSS IGSS IDSS VGS(off) VDS(on) rds(on) Crss td tr toff Parameter Gate-Source Voltage Gate Reverse Current Zero-Gate Voltage Drain Current Gate-Source Cut-off Voltage Drain-Source On Voltage Drain-Source On Reverse Reverse Transfer Capacitance Delay Time Rise Time Turn-off Time Test Condition VDS = 0V, IC = 1µA VGS = 20V VDS = 15V, VGS = 0V VDS = 15V, ID = 0.5nA VGS = 0V, ID = 5mA VGS = 0V, ID = 0 VDS = 0V, VGS = 10V VDD = 10V, VGS(on) = 0V ID = 10mA, VGS(off) = 10V 8 0.8 Min. 40 Typ. Max. 1 80 4 0.4 60 5 10 10 100 Units V nA mA V V Ω pF nS nS nS ©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002 BSR58 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A1, November...