SEMICONDUCTOR
TECHNICAL DATA
KBP3005 ~ KBP310
Bridge Rectifier
■ Features
● Io
3A
● VRRM
50V~1000V
● Glass passivated chip
● High surge forward current capability
■ Applications
● General purpose 1 phase Bridge
rectifier applications
■ Outline Dimensions and Mark
KBP
.457(11.6)
.434(11.0)
+ AC -
.500(12.7)
MIN
.035(0.90)
.028(0.70)
.160(4.10)SPACING
.140(3.60)
.153(3.90)
.146(3.70)
.590(15.0)
.567(14.4)
.050(1.27)
.043(1.10)
Dimensions in inches and (millimeters)
■ Limiting Values(Absolute Maximum Rating)
Item
Symbol Unit
Repetitive Peak Reverse Voltage VRRM
V
Conditions
KBP3
005 01 02 04 06 08 10
50 100 200 400 600 800 1000
Average Rectified Output
Current
IO A 60HZ sine wave, R- load, Ta=30℃
3
Surge(Non-repetitive)Forward
Current
IFSM
A 60HZ sine wave, 1 cycle, Ta=25℃
80
Current Squared Time
I2t A2s 1ms≤t ＜ 8.3ms Tj=25℃,Rating of
per diode
26.5
Storage Temperature
Tstg ℃
-55 ~+150
Junction Temperature
Tj ℃
-55 ~+150
■ Electrical Characteristics（Ta=25℃ Unless otherwise specified）
Item
Symbol Unit
Test Condition
Max
Peak Forward Voltage
VFM V IFM=3A, Pulse measurement, Rating of per diode
1.1
Peak Reverse Current
IRRM μA VRM=VRRM , Pulse measurement, Rating of per diode
10
Thermal Resistance(1)
RθJ-A
RθJ-L
℃/W
Between junction and ambient
Between junction and lead
20
11
Notes :
（1）Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.47×0.47”(12×12mm) copper
pads
2014 11 28
Revision No : 0
1/2
