BRIDGE RECTIFIERS. KBP206 Datasheet

KBP206 RECTIFIERS. Datasheet pdf. Equivalent

KBP206 Datasheet
Recommendation KBP206 Datasheet
Part KBP206
Description SILICON BRIDGE RECTIFIERS
Feature KBP206; www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 KBP200 - KBP210 SILICON BRIDGE R.
Manufacture EIC
Datasheet
Download KBP206 Datasheet




EIC KBP206
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
KBP200 - KBP210
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Rated isolation-voltage 2000 VAC
* Ideal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-0 rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.4 grams
0.448 (11.4)
0.433 (11.0)
0.696 (17.7)
MIN.
0.051 (1.30)
0.043 (1.10)
KBP
0.59 (14.9)
0.57 (14.5)
+ AC AC
Φ3
0.0307 (0.78)
0.0303 (0.77)
0.150 (3.82)
0.148 (3.78)
0.151 (3.85 )
0.147 (3.75)
Dimensions in inches and ( millimeter )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 50°C
Peak Forward Surge Current, Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 1.0 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance per Diode (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
KBP
200
VRRM
50
VRMS
35
VDC
50
IF(AV)
KBP
201
100
70
100
KBP
202
200
140
200
KBP
204
400
280
400
2.0
KBP
206
600
420
600
KBP
208
800
560
800
KBP
210
1000
700
1000
UNIT
V
V
V
A
IFSM
I2t
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
60
10
1.0
10
1.0
24
30
- 50 to + 125
- 50 to + 125
A
A2S
V
μA
mA
pF
°C/W
°C
°C
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient with units mounted on a 0.47" X 0.47" ( 12mm X 12mm ) Cu. Pads.
Page 1 of 2
Rev. 04 : May 6, 2013



EIC KBP206
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( KBP200 - KBP210 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
2.0
1.5
60 Hz, Resistive or
inductive load.
1.0
0.5
P.C. Board Mounted with
0.47" X 0.47" ( 12mm X 12mm )
Cu. pads.
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
80
70
60
TJ = 55 °C
50
40
30
20
10
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
12
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
Pulse Width = 300 μs
1 % Duty Cycle
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
1.0
TJ = 25 °C
0.1
0.010.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 04 : May 6, 2013







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