SILICON BRIDGE RECTIFIERS
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
KBP200 - KBP210
SILICON BRIDGE RECTIFIERS
PRV : 50 ...
Description
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
KBP200 - KBP210
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* High case dielectric strength * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 3.4 grams
0.448 (11.4) 0.433 (11.0)
0.696 (17.7) MIN.
0.051 (1.30) 0.043 (1.10)
KBP
0.59 (14.9) 0.57 (14.5)
+ AC AC
Φ3
0.0307 (0.78) 0.0303 (0.77)
0.150 (3.82) 0.148 (3.78)
0.151 (3.85 ) 0.147 (3.75)
Dimensions in inches and ( millimeter )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 50°C
Peak Forward Surge Current, Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 1.0 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Junction ...
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