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Efficient Rectifier. US1D Datasheet |
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US1A THRU US1M
RoHS
COMPLIANT
High Efficient Rectifier
Features
● High efficiency
● High current capability
● High Reliability
● High surge current capability
● Solder dip 260 °C max. 10 s, per JESD 22-B106
Mechanical Data
● Package: SMA-W
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
● Polarity:Color band denotes cathode end
■Maximum Ratings (Ta=25℃ Unless otherwise specified）
PARAMETER
SYMBOL UNIT US1A
US1B
US1D
US1G
US1J
US1K
Device marking code
US1A
US1B
US1D
US1G
US1J
US1K
Repetitive Peak Reverse Voltage
VRRM
V
50
100 200 400 600 800
Average Forward Current @60Hz sine wave,
Resistance load, Ta=50℃
Surge(Non-repetitive)Forward Current @60Hz
Half-sine wave, 1 cycle, Ta=25℃
IO
IFSM
A
A
1.0
30
Storage Temperature
Tstg ℃
-55 ~+150
Junction Temperature
Tj ℃
-55~+125
US1M
US1M
1000
■Electrical Characteristics（Ta=25℃ Unless otherwise specified）
PARAMETER
SYMBOL UNIT
TEST
CONDITIONS
US1A
US1B US1D
Maximum instantaneous forward voltage
drop per diode
VFM
V IFM=1.0A
1.0
Maximum DC reverse current at
rated DC blocking voltage per diode
Reverse Recovery time
Typical junction capacitance
IRRM1
IRRM2
trr
Cj
Ta=25℃
μA Ta=100℃
ns
IF=0.5A IR=1A
IRR=0.25A
Measured at
1MHZ and
pF Applied Reverse
Voltage of 4.0
V.D.C.
50
20
US1G
1.3
2.5
150
US1J
US1K
1.7
75
15
US1M
■Thermal Characteristics （Ta=25℃ Unless otherwise specified）
PARAMETER
SYMBOL UNIT
US1A
US1B
US1D
Thermal Resistance(Typical)
RθJ-A
℃/W
US1G
55
US1J
US1K
US1M
S-A205
Rev. 2.0, 28-Apr-14
1/4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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US1A THRU US1M
■Ordering Information (Example)
PREFERED P/N
PACKAGE CODE UNIT WEIGHT(g)
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
US1A ~ US1M
F1
Approximate 0.067
5000
10000
OUTER CARTON
QUANTITY(pcs)
80000
DELIVERY MODE
Reel
■ Characteristics (Typical)
FIG.1: Io-Ta Curve
1.0
FIG.2: Surge Forward Currrent Capability
30
0.8 24
8.3ms Single Half Sine Wave
JEDEC Method
0.6 18
0.4
S ingle Phase
Half Wave 60HZ
0.2 Resistive or
Inductive Load
0.375''(9.5mm)
Lead Length
0
0
50
100
100
Ambient Temperature (℃)
150
20
10
4.0
2.0
1.0
0.4
0.2
0.1
0.02
0.01
0.6
FIG.3: Forward Voltage
US1A-US1D
US1G
US1J-US1M
TJ=25℃
Pulse width=300us
1% Duty Cycle
0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
2.0
12
6
0
1
2 4 6 8 10
20 40 60 80 100
Number of Cycles
FIG.4: Typical Reverse Characteristics
100
10 Tj=125℃
1.0
0.1
0.01
Tj=100℃
Tj=25℃
0.001
0
20 40 60
80
Percent of Rated Peak Reverse Voltage (%)
100
S-A205
Rev. 2.0, 28-Apr-14
2/4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
|
US1A THRU US1M
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
50Ω
NONINDUCTIVE
10Ω
NONINDUCTIVE
(+) DUT
(-)
(-)
PULSE
GENERATOR
(NOTE2)
1Ω
NONINDUCTIV
OSCILLOSCOPE
(NOTE1)
(+)
NOTES:
1.Rise Time=7ns max .Inpot Impedance=1MΩ 22pf
2.Rise Time=10ns max.Sourse Impedance=50Ω
+0.5A
0
-0.25A
trr
-1.0A
1cm
SET TIME BASE FOR
5/10ns/cm
■ Outline Dimensions
SMA-W
Mounting Pad Layout
1.96
2.04
1.66
5.58
Dimensions in millimeters
SMA-W
Dim Min Max
A 4.00 4.60
B 2.40 2.65
C 4.80 5.31
D 2.05 2.45
E 0.80 1.50
F 0.10 0.20
G 1.15 1.80
S-A205
Rev. 2.0, 28-Apr-14
3/4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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