Power MOSFET
BSS123LT1
Preferred Device
Power MOSFET 170 mAmps, 100 Volts
N−Channel SOT−23
Features
• Pb−Free Packages are Available...
Description
BSS123LT1
Preferred Device
Power MOSFET 170 mAmps, 100 Volts
N−Channel SOT−23
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Source Voltage
VDSS 100 Vdc
Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms)
VGS ± 20 Vdc VGSM ± 40 Vpk
Drain Current − Continuous (Note 1) − Pulsed (Note 2)
Adc
ID 0.17 IDM 0.68
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
(Note 3) TA = 25°C Derate above 25°C
PD 225 mW 1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
556 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
1. The Power Dissipation of the package may result in a lower continuous drain
current. 2. Pulse Width v 300 ms, Duty Cycle v 2.0%. 3. FR−5 = 1.0 0.75 0.062 in.
170 mAMPS 100 VOLTS RDS(on) = 6 W
N−Channel 3
1
2
MARKING DIAGRAM
3 SOT−23
CASE 318 1 STYLE 21
2
SA
SA = Device Code M = Date Code
PIN ASSIGNMENT
Drain 3
M
12 Gate Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices f...
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