EFFICIENT RECTIFIER. US1B Datasheet

US1B RECTIFIER. Datasheet pdf. Equivalent

US1B Datasheet
Recommendation US1B Datasheet
Part US1B
Description SMD HIGH EFFICIENT RECTIFIER
Feature US1B; SMD HIGH EFFICIENT RECTIFIER RoHS US1A (G) thru US1M (G) 1.0 Amp FEATURES • Voltage Range 50 to .
Manufacture RFE
Datasheet
Download US1B Datasheet




RFE US1B
SMD HIGH EFFICIENT RECTIFIER
RoHS
US1A (G) thru US1M (G)
1.0 Amp
FEATURES
• Voltage Range 50 to 1000 Volts
• Available in glass passivated chip junction
with G suffix
• Very Fast Recovery
• Low forward voltage drop
• High surge current capability
• Epitaxial construction
• High temperature soldering
260°C/10 seconds at terminals
MECHANICAL DATA
Molded plastic body (UL 94 V-0 Rated)
Solder plated terminals
Polarity: Indicated by cathode band
Packaging: 12mm tape EIA STD RS-481
Weight: 0.064 gram
0.065 (1.65)
0.049 (1.25)
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
Cathode Band
0.177 (4.50)
0.157 (3.99)
0.110 (2.79)
0.100 (2.54)
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
SMA (DO-214AC)
Dimensions in mm
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified
Single phase, half wave 60Hz, resistive or inductive load
For capacitive load, derate current by 20%
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@ Ta = 50°C
Peak Forward Surge Current 8.3ms Single
Half Sine-Wave Superimposed on Rated Load
(JEDEC Method)
Symbol US1A US1B US1D US1F US1G US1J US1K US1M Unit
VRRM 50 100 200 300 400 600 800 1000 V
VRMS 35 70 140 210 280 420 560 700 V
VDC 50 100 200 300 400 600 800 1000 V
IF (AV) 1.0 A
IFSM 30 A
Maximum Instantaneous Forward Voltage @1.0A
Maximum DC Reverse Current @ TA = 25°C
At rated DC blocking voltage @ TA = 125°C
Reverse Recovery Time (Note 1.)
Junction Thermal Resistance (Note 2.)
Operating Temperature Range
VF
IR
trr
RθJL
RθJT
TJ
1.0 1.3 1.7
5.0
50.0
50 75
25
55
-55 to +125 / -55 to +175 for (G)
V
A
nS
°C / W
°C
Storage Temperature Range
TSTG
-55 to +150
°C
NOTE: 1. Reverse Recovery Test conditions: IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured on P C Board with 0.2x0.2”(5.0x5.0mm) Copper Pad Areas
Page 1 of 2
RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail Sales@rfeinc.com
C3HER01
2013.04.24



RFE US1B
SMD HIGH EFFICIENT RECTIFIER
RoHS
US1A (G) thru US1M (G)
1.0 Amp
RATING & CHARACTERISTIC CURVES
100
FIG.1-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
1
50
1
20
1
10
1
5
8.3ms Single
Half Sine Wave
1 JEDEC Method
2
1
1
1
10
NUMBER OF CYCLES AT 60Hz
100
FIG.2-MAXIMUM CURRENT DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.20 2(5.0mm2) x 0.5mil
Inches (0.013mm)
Thick Copper Pad Areas
US1A
~
US1M
US1AG
~
US1MG
20 40 60 80 100 120 140 160 180
Case Temperature (V)
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
US1A ~ US1D
US1F ~ US1G
10
4.0
2.0
1.0
US1J ~ US1M
0.4
0.2
0.1
TJ = 25°C
Pulse width = 300µs
1% Duty Cycle
0.02
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE (V)
FIG.4-TYPICAL REVERSE CHARACTERISTICS
1000
100
TJ = 125°C
10
TJ = 75°C
1.0
1 TJ = 25°C
0.1
0.01
0 20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Page 2 of 2
RFE International • Tel:(949) 833-1988 • Fax:(949) 833-1788 • E-Mail Sales@rfeinc.com
C3HER01
2013.04.24







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