SPM 5. FSB50450B Datasheet

FSB50450B 5. Datasheet pdf. Equivalent

FSB50450B Datasheet
Recommendation FSB50450B Datasheet
Part FSB50450B
Description Motion SPM 5
Feature FSB50450B; FSB50450B / FSB50450BS Motion SPM® 5 Series FSB50450B / FSB50450BS Motion SPM® 5 Series February 2.
Manufacture ON Semiconductor
Datasheet
Download FSB50450B Datasheet




ON Semiconductor FSB50450B
FSB50450B / FSB50450BS
Motion SPM® 5 Series
February 2017
Features
• UL Certified No. E209204 (UL1557)
• Optimized for over 10 kHz Switching Frequency
• 500 V FRFET MOSFET 3-Phase Inverter with Gate
Drivers and Protection
• Built-In Bootstrap Diodes Simplify PCB Layout
• Separate Open-Source Pins from Low-Side MOSFETs
for Three-Phase Current-Sensing
• Active-HIGH Interface, Works with 3.3 / 5 V Logic,
Schmitt-trigger Input
• Optimized for Low Electromagnetic Interference
• HVIC Temperature-Sensing Built-In for Temperature
Monitoring
• HVIC for Gate Driving and Under-Voltage Protection
• Isolation Rating: 1500 Vrms / min.
• RoHS Complia
• Moisture Sensitive Level (MSL) 3 for SMD PKG
Applications
• 3-Phase Inverter Driver for Small Power AC Motor
Drives
Related Source
RD-FSB50450AS - Reference Design for Motion SPM
5 Series Ver.2
• AN-9082 - Motion SPM5 Series Thermal Performance
by Contact Pressure
General Description
The FSB50450B / FSB50450BS is an advanced Motion
SPM® 5 module providing a fully-featured, high-
performance inverter output stage for AC Induction,
BLDC and PMSM motors. These modules
integrate optimized gate drive of the built-in MOSFETs
(FRFET® technology) to minimize EMI and losses, while
also providing multiple on-module protection features
including under-voltage lockouts and thermal monitoring.
The built-in high-speed HVIC requires only a single
supply voltage and translates the incoming logic-level
gate inputs to the high-voltage, high-current drive signals
required to properly drive the module's internal
MOSFETs. Separate open-source MOSFET terminals
are available for each phase to support the widest
variety of control algorithms.
< FSB50450B >
Figure 1. 3D Package Drawing
<FSB50450BS >
(Click to Activate 3D Content)
Package Marking & Ordering Information
Device
FSB50450B
FSB50450BS
Device Marking
FSB50450B
FSB50450BS
Package
SPM5P-023
SPM5Q-023
Packing Type
Rail
Tape & Reel
Reel Size
NA
330mm
Quantity
15
450
Semiconductor Components Industries, LLC, 2017
FSB50450B / FSB50450BS . Rev. 1.2
1
www.fairchildsemi.com
www.onsemi.com



ON Semiconductor FSB50450B
Absolute Maximum Ratings
Inverter Part (each MOSFET unless otherwise specified.)
Symbol
Parameter
Conditions
VDSS
*ID 25
*ID 80
*IDP
*IDRMS
Drain-Source Voltage of Each MOSFET
Each MOSFET Drain Current, Continuous TC = 25°C
Each MOSFET Drain Current, Continuous TC = 80°C
Each MOSFET Drain Current, Peak
TC = 25°C, PW < 100 μs
Each MOSFET Drain Current, Rms
TC = 80°C, FPWM < 20 kHz
Rating
500
2.2
1.4
5.0
1.0
Control Part (each HVIC unless otherwise specified.)
Symbol
Parameter
Conditions
VDD Control Supply Voltage
VBS High-side Bias Voltage
VIN Input Signal Voltage
Applied between VDD and COM
Applied between VB and VS
Applied between VIN and COM
Rating
20
20
-0.3 ~ VDD + 0.3
Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)
Symbol
Parameter
Conditions
VRRMB Maximum Repetitive Reverse Voltage
* IFB
* IFPB
Forward Current
Forward Current (Peak)
TC = 25°C
TC = 25°C, Under 1ms Pulse Width
Rating
500
0.5
2.0
Thermal Resistance
Symbol
Parameter
Rth(j-c)Q
Junction to Case Thermal Resistance
( Note1 )
Conditions
Inverter MOSFET part, (Per Module)
Rating
2.3
Total System
Symbol
Parameter
TJ
TSTG
Operating Junction Temperature
Storage Temperature
VISO
Isolation Voltage
Conditions
60 Hz, Sinusoidal, 1 Minute, Con-
nect Pins to Heat Sink Plate
Rating
-40 ~ 150
-40 ~ 125
1500
Notes:
1. For the measurement point of case temperature TC, please refer to Figure 4.
2. Marking “ * “ is calculation value or design factor.
Unit
V
A
A
A
Arms
Unit
V
V
V
Unit
V
A
A
Unit
°C/W
Unit
°C
°C
Vrms
Semiconductor Components Industries, LLC, 2017
FSB50450B / FSB50450BS . Rev. 1.2
2
www.fairchildsemi.com
www.onsemi.com



ON Semiconductor FSB50450B
Pin descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Pin Name
COM
VB(U)
VDD(U)
IN(UH)
IN(UL)
N.C
VB(V)
VDD(V)
IN(VH)
IN(VL)
VTS
VB(W)
VDD(W)
IN(WH)
IN(WL)
N.C
P
U, VS(U)
NU
NV
V, VS(V)
NW
W, VS(W)
Pin Description
IC Common Supply Ground
Bias Voltage for U-Phase High-Side MOSFET Driving
Bias Voltage for U-Phase IC and Low-Side MOSFET Driving
Signal Input for U-Phase High-Side
Signal Input for U-Phase Low-Side
No Connection
Bias Voltage for V-Phase High Side MOSFET Driving
Bias Voltage for V-Phase IC and Low Side MOSFET Driving
Signal Input for V-Phase High-Side
Signal Input for V-Phase Low-Side
Output for HVIC Temperature Sensing
Bias Voltage for W-Phase High-Side MOSFET Driving
Bias Voltage for W-Phase IC and Low-Side MOSFET Driving
Signal Input for W-Phase High-Side
Signal Input for W-Phase Low-Side
No Connection
Positive DC-Link Input
Output for U-Phase & Bias Voltage Ground for High-Side MOSFET Driving
Negative DC-Link Input for U-Phase
Negative DC-Link Input for V-Phase
Output for V-Phase & Bias Voltage Ground for High-Side MOSFET Driving
Negative DC-Link Input for W-Phase
Output for W Phase & Bias Voltage Ground for High-Side MOSFET Driving
(1) COM
(2) VB(U)
(3) VDD(U)
(4) IN (UH)
(5) IN (UL)
(6) N.C
(7) VB(V)
(8) VDD(V)
(9) IN (VH)
(10) IN (VL)
(11) VTS
(12) V B(W)
(13) V DD(W)
(14) IN (WH)
(15) IN (WL)
(16) N.C
VDD
HIN
LIN
COM
VB
HO
VS
LO
VDD
HIN
LIN
COM
VTS
VB
HO
VS
LO
VDD
HIN
LIN
COM
VB
HO
VS
LO
(17) P
(18) U, VS(U)
(19) N U
(20) NV
(21) V, VS(V)
(22) N W
(23) W, VS(W)
Figure 2. Pin Configuration and Internal Block Diagram (Bottom View)
Notes:
3. Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside Motion SPM® 5 product. External connections should be made as
indicated in Figure 3.
Semiconductor Components Industries, LLC, 2017
FSB50450B / FSB50450BS . Rev. 1.2
3
www.fairchildsemi.com
www.onsemi.com





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