BSS131

BSS 131 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 G Type BSS 131 Type BSS 131 BSS 131 Pin 2 S Marking SRs Pin 3 D VDS 240 V ID 0.1 A RDS(on) 16 Ω Package SOT-23 Ordering Code Q62702-S565 Q67000-S229 Tape and Reel Information E6327 E6433 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 240 240 Unit V VDS VDGR VGS Vgs ID RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current ± 14 ± 20 A 0.1 TA = 26 °C DC drain current, pulsed IDpuls 0.4 TA = 25 °C Power dissipation Ptot 0.36 W TA = 25 °C Semiconductor Group 1 Sep-13-1996 BSS 131 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm Symbol Values -55 ... + 150 -55 ... + 150 ≤ 350 ≤ 285 E 55 / 150 / 56 Unit °C K/W Tj Tstg RthJA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 240 1.4 0.1 2 1 12 15 2 1 60 30 10 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS µA nA nA Ω 16 26 VDS = 240 V, VGS = 0 V, Tj = 25 °C...