Bridge Rectifiers. KBU806-G Datasheet

KBU806-G Rectifiers. Datasheet pdf. Equivalent

KBU806-G Datasheet
Recommendation KBU806-G Datasheet
Part KBU806-G
Description Silicon Bridge Rectifiers
Feature KBU806-G; Silicon Bridge Rectifiers KBU8005-G Thru. KBU810-G Reverse Voltage: 50 to 1000V Forward Current: 8.0.
Manufacture Comchip
Datasheet
Download KBU806-G Datasheet





Comchip KBU806-G
Silicon Bridge Rectifiers
KBU8005-G Thru. KBU810-G
Reverse Voltage: 50 to 1000V
Forward Current: 8.0A
RoHS Device
Features
-Surge overload rating -200 amperes peak.
-Ideal for printed circuit board.
-UL recognized file # E349301 R
Mechanical Data
-Epoxy: UL 94V-0 rate flame retardant.
-Case: Molded plastic, KBU
-Mounting position: Any.
-Weight: 7.40 grams (approx.).
0.700(17.8)
0.600(16.8)
KBU
0.157(4.0)*45°
0.935(23.7)
0.895(22.7)
0.15ΦX23L
(3.8ΦX5.7L)
HOLE TH RU
300
(7 .5)
0.780(19.8)
0.740(18.8)
1.00
(2 5 .4)M IN.
0.052(1.3)DIA.
0.048(1.2)TYP.
.08 7(2.2)
.071 (1.8)
0.220(5.6)
0.180(4.6)
0.276(7.0)
0.256(6.5)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Symbol
KBU
8005-G
KBU
801-G
KBU
802-G
KBU
804-G
KBU
806-G
Maximum Recurrent Peak Reverse Voltage
VRRM
50
Maximum RMS Voltage
VRMS
35
Maximum DC Blocking Voltage
VDC 50
Maximum Average Forward
Rectified Output Current
@Tc=100°C
Peak Forward Surge Current, 8.3ms Single
Half Sine-Wave Super Imposed
On Rated Load (JEDEC Method)
Maximum Instantaneous Forward Voltage Drop
per Element at 4.0A
Max. Reverse Leakage at rated @TJ=25°C
DC Blocking Voltage per Element @TJ=100°C
Typical Junction Capacitance Per Element
(Note 1)
I(AV)
IFSM
VF
IR
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
100 200 400 600
70 140 280 420
100 200 400 600
8.0
200
1.0
10.0
300
250
-55 to +150
-55 to +150
KBU
808-G
800
560
800
KBU
810-G
1000
700
1000
Unit
V
V
V
A
A
V
μA
pF
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BBR79
Comchip Technology CO., LTD.
REV: B
Page 1



Comchip KBU806-G
Silicon Bridge Rectifiers
Rating and Characteristics Curves (KBU8005-G Thru. KBU810-G)
Fig.1 - Derating Curve Output
Rectified Current
10.0
HEAT SINK MOUNTING
8.0
6.0
Fig.2 - Typical Instantaneous Forward
Characteristics
100
10
4.0
2.0
MOUNTED ON4*4 INCH
COPPER PC BOARD.TA
0.51(1.27mm)LEAD LENGTH
0.0
0
25 50 75
100
125
Case Temperature, (°C)
150
1.0
0.1
0.6
0.7 0.8
TJ=25°C
PULSE WIDTH=300μs
1%DUTY CYCLE
0.9 1.0 1.1 1.2 1.3
Instantaneous Forward Voltage, (V)
Fig.3 - Maximum Non-repetitive Peak
Forward Surge Current
250
Fig.4 - Typical Junction Capacitance
Per Element
400
200
150 100
100
50
0
1 10 100
Number Of Cycles At 60Hz
10
1
10 100
Reverse Voltage, (V)
Fig.5 - Typical Reverse Characteristics
10.0
1.0
TJ=100°C
0.1
TJ=25°C
0.01
0 20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage, (V)
Company reserves the right to improve product design , functions and reliability without notice. REV: B
QW-BBR79
Comchip Technology CO., LTD.
Page 2



Comchip KBU806-G
Silicon Bridge Rectifiers
Marking Code
Part Number
KBU8005-G
KBU801-G
KBU802-G
KBU804-G
KBU806-G
KBU808-G
KBU810-G
Marking code
KBU8005
KBU801
KBU802
KBU804
KBU806
KBU808
KBU810
C
KBU XXXX
- AC +
XXX / XXXX = Product type marking code
C = Compchip Logo
Standard Packaging
Case Type
KBU
BULK PACK
BOX
( pcs )
Carton
( pcs )
400 2,400
Company reserves the right to improve product design , functions and reliability without notice. REV: B
QW-BBR79
Comchip Technology CO., LTD.
Page 3





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)