BSS139

SIPMOS® Small-Signal Transistor q q q q q q q BSS 139 VDS 250 V ID 0.04 A RDS(on) 100 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking 1 G 2 S 3 D STs Package SOT-23 BSS 139 Q62702-S612 E6327: 3000 pcs/reel; BSS 139 Q67000-S221 E7941: 3000 pcs/reel; VGS(th) selected in groups: (see page 491) Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Gate-source peak voltage, aperiodic Continuous drain current, TA = 25 ˚C Pulsed drain current, Max. power dissipation, Symbol Values 250 250 ± 14 ± 20 0.04 0.12 0.36 – 55 … + 150 ≤ 350 ≤ 285 E 55/150/56 Unit V TA = 25 ˚C TA = 25 ˚C Operating and storage temperature range Thermal resistance, chip-ambient (without heat sink) chip-substrate – reverse side 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) VDS VDGR VGS Vgs ID ID puls Ptot Tj, Tstg RthJA RthJSR – – A W ˚C K/W – For package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 10.94 BSS 139 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 250 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-resistance VGS = 0 V, ID = 0.01...