BSS159N

BSS159N SIPMOS® Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS R DS(on),max I DSS,min 60 8 0.13 V Ω A SOT-23 Type BSS159N Package SOT-23 Ordering Code Q67042-S1488 Tape and Reel Information E6327: 3000 pcs/reel Marking SGs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.23 A, V DS=60 V, di /dt =200 A/µs, T j,max=150 °C Value 0.23 0.18 0.92 Unit A Reverse diode dv /dt dv /dt 6 kV/µs Gate source voltage ESD sensitivity (HBM) as per MIL-STD 883 Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS ±20 Class 1 V P tot T j, T stg T A=25 °C 0.36 -55 ... 150 55/150/56 W °C Rev. 1.0 page 1 2004-02-19 BSS159N Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - minimal footprint R thJA 350 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS=-10 V, I D=250 µA V GS(th) I D (off) V DS=3 V, I D=26 µA V DS=60 V, V GS=-10 V, T j=25 °C V DS=60 V, V GS=-10 V, T j=125 °C Gate-source leakage current Saturated drain current Drain-source on-state resistance I GSS I DSS R DS(on) V GS=20 V, V DS=0 V V GS=0 V, V DS=10 V V GS=0 V, I D=0.07 A V GS=10 V, I D=0.23...